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Proceedings Paper

Mode locking of a ring cavity semiconductor diode laser
Author(s): Louis Desbiens; Ararat Yesayan; Michel Piche
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Paper Abstract

We report new results on the generation and characterization of picosecond pulses from a self-mode-locked semiconductor diode laser. The active medium (InGaAs, 830-870 nm) is a semiconductor optical amplifier whose facets are cut at angle and AR coated. The amplifier is inserted in a three-minor ring cavity. Mode locking is purely passive; it takes place for specific alignment conditions. Trains of counterpropagating pulses are produced, with pulse duration varying from 1 .2 to 2 ps. The spectra of the counterpropagatmg pulses do not fully overlap; their central wavelengths differ by a few nm. The pulse repetition rate has been varied from 0.3 to 3 GHz. The pulses have been compressed to less than 500-fs duration with a grating pair. We discuss some of the potential physical mechanisms that could be involved in the dynamics of the mode-locked regime. Hysteresis in the LI curve has been observed. To characterize the pulses, we introduce the idea of a Pulse Quality Factor, where the pulse duration and spectral width are calculated from the second-order moments of the measured intensity autocorrelation and power spectral density.

Paper Details

Date Published: 15 December 2000
PDF: 7 pages
Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); doi: 10.1117/12.406320
Show Author Affiliations
Louis Desbiens, Univ. Laval (Canada)
Ararat Yesayan, Univ. Laval (Canada)
Michel Piche, Univ. Laval (Canada)

Published in SPIE Proceedings Vol. 4087:
Applications of Photonic Technology 4
Roger A. Lessard; George A. Lampropoulos, Editor(s)

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