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Proceedings Paper

Adiabatic mode expansion laser diodes fabricated by selective area growth
Author(s): Jun Ping Zhang; Xiaojun Wang; Jem Yu Fan; Qiangsheng Xiang; Fow-Sen Choa
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Paper Abstract

Adiabatic mode expansion laser diodes (AME-LDs) with small beam divergence fabricated by selective area growth (SAG) are described. The AME-LDs have low thresholds of around 12 mA. The lateral and vertical far field angles (FWHM) are reduced from 25° and 300 to 8° and 14°, respectively. The measured alignment tolerance to a cleaved single mode fiber (SMF) is 3 pm.

Paper Details

Date Published: 15 December 2000
PDF: 5 pages
Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); doi: 10.1117/12.406316
Show Author Affiliations
Jun Ping Zhang, Univ. of Maryland/Baltimore County (United States)
Xiaojun Wang, Univ. of Maryland/Baltimore County (United States)
Jem Yu Fan, Univ. of Maryland/Baltimore County (United States)
Qiangsheng Xiang, Univ. of Maryland/Baltimore County (United States)
Fow-Sen Choa, Univ. of Maryland/Baltimore County (United States)


Published in SPIE Proceedings Vol. 4087:
Applications of Photonic Technology 4
Roger A. Lessard; George A. Lampropoulos, Editor(s)

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