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Proceedings Paper

Effect of background acceptor impurity on the radiative transition in low-dimensional InGaAs material
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Paper Abstract

The e-AO FB radiative transition is investigated by the 10K PL measurements for the unintentionally doped MOCVD grown InGaAs. The intensity ratio of the e-AO FB transition to the BE exciton transition is found to be greatly larger in bulk material than that in the quantum well samples. In quantum well samples, this ratio is found to decrease rapidly as the well width decreases. A model is presented to calculate the oscillator strength of the e-AO recombination and the 1 1H excitonic recombination in quantum well, and this simulation can semi-quantitatively explain the experimental results.

Paper Details

Date Published: 15 December 2000
PDF: 7 pages
Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); doi: 10.1117/12.406315
Show Author Affiliations
Xiaojun Wang, Univ. of Maryland/Baltimore County (United States)
Fow-Sen Choa, Univ. of Maryland/Baltimore County (United States)


Published in SPIE Proceedings Vol. 4087:
Applications of Photonic Technology 4
Roger A. Lessard; George A. Lampropoulos, Editor(s)

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