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Proceedings Paper

Laser wire bonding in power transistors
Author(s): Franciszek Kostrubiec; Ryszard Pawlak
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Paper Abstract

Attempts at increasing the reliability of assembly of power transistors the authors have proposed a new method for thick wire bonding. Bonding produced in this technology has the form of weld made by the pulsed laser beam. The results of some investigations into the proposed method are presented. The results of studies on semiconductor test structures bring the hope for the positive solution to the problem of increasing the reliability of assembly of such structures.

Paper Details

Date Published: 2 November 2000
PDF: 5 pages
Proc. SPIE 4238, Laser Technology VI: Applications, (2 November 2000); doi: 10.1117/12.405978
Show Author Affiliations
Franciszek Kostrubiec, Technical Univ. of Lodz (Poland)
Ryszard Pawlak, Technical Univ. of Lodz (Poland)

Published in SPIE Proceedings Vol. 4238:
Laser Technology VI: Applications
Wieslaw L. Wolinski; Zdzislaw Jankiewicz, Editor(s)

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