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Proceedings Paper

Multilayer x-ray optics for energies E > 8 keV and their application in x-ray analysis
Author(s): Reiner Dietsch; Stefan Braun; Thomas Holz; Hermann Mai; Roland Scholz; Lutz Bruegemann
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Paper Abstract

Performance of Ni/C, Ni/B4C, Mo/B4C and W/B4C multilayers in the energy range E > 8 keV is considered by simulation of x-ray reflectivity and resolution of 1st order Bragg reflection at three different photon energies. The results indicate, that Ni/C and Ni/B4C multilayers show highest theoretical reflectivities of R > 80% for Cu K(alpha) - radiation and also above the Mo K-edge (E equals 20.04 keV) at 30 keV. For Mo K(alpha) -radiation a reflectivity of R > 90% can be achieved by the use of Mo/B4C multilayers. For applications, where period thicknesses d < 3 nm and high reflectivities are required W/B4C multilayers can be used. Theoretical values are compared with X-ray reflectometry results, which were executed at 75 period Ni/C, Ni/B4C and Mo/B4C multilayers, fabricated by pulsed laser deposition (PLD) technology on Si substrates. Amorphous or nanocrystalline structures of single layers, smoothest interfaces and high reproducibility of single layer thickness across the entire layer stack are the results of this high precision PLD process.

Paper Details

Date Published: 2 November 2000
PDF: 11 pages
Proc. SPIE 4144, Advances in Laboratory-based X-Ray Sources and Optics, (2 November 2000); doi: 10.1117/12.405887
Show Author Affiliations
Reiner Dietsch, Fraunhofer Institute for Material and Beam Technology (Germany)
Stefan Braun, Fraunhofer Institute for Material and Beam Technology (Germany)
Thomas Holz, Fraunhofer Institute for Material and Beam Technology (Germany)
Hermann Mai, Fraunhofer Institute for Material and Beam Technology (Germany)
Roland Scholz, Max-Planck-Institute of Microstructure Physics (Germany)
Lutz Bruegemann, Bruker Advanced X-Ray Solutions GmbH (Germany)


Published in SPIE Proceedings Vol. 4144:
Advances in Laboratory-based X-Ray Sources and Optics
Carolyn A. MacDonald; Ali M. Khounsary, Editor(s)

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