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Proceedings Paper

Optical characterization of doping profiles in silicon
Author(s): Romeo Bernini; Luigi Zeni; Rocco Pierri
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Paper Abstract

A new method of doping profile reconstruction, starting from infrared spectroscopic measurements, is presented and numerically analyzed. We have developed, relying on the scattering integral equations, a new formulation allowing to directly relate the optical reflected intensity to the free carriers concentration. This formulation has been used to develop an iterative algorithm for dopant profiling. The main advantage of our approach is that the unknown dopant file is modeled by a finite series of basic functions. As the series expansion allows to describe a wide class of profiles, it is not necessary to choose a priori the functional form of the doping profile (e.g. exponential function, gaussian function, error function etc.). This allows to reconstruct the actual profile, regardless of its similarity with the expected one.

Paper Details

Date Published: 2 November 2000
PDF: 11 pages
Proc. SPIE 4099, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries, (2 November 2000); doi: 10.1117/12.405834
Show Author Affiliations
Romeo Bernini, Seconda Univ. degli Studi di Napoli (Italy)
Luigi Zeni, Seconda Univ. degli Studi di Napoli (Italy)
Rocco Pierri, Seconda Univ. degli Studi di Napoli (Italy)


Published in SPIE Proceedings Vol. 4099:
Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries
Ghanim A. Al-Jumaily; Angela Duparre; Bhanwar Singh, Editor(s)

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