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Proceedings Paper

Characteristics of tantalum oxynitride films prepared by rf magnetron sputtering
Author(s): Chao An Jong; Tsung Shune Chin
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Paper Abstract

Tantalum oxynitride (TaOxNy) thin films were prepared in a RF magnetron sputtering system. The film properties with various sputtering parameters such as RF power, gases ratio, and substrate temperatures were investigated. In comparison with tantalum oxide films, the film properties are strongly affected by the nitrogen content. The microstructure studied by XRD and TEM revealed amorphous. When the nitrogen content varied from 20% to 80%, the deposition rates increase from 5.5 to 11.8 nm/min. Because of the stronger affinity of oxygen to Ta than nitrogen does, the oxygen content of the films is always higher than nitrogen content, even if the partial pressure of nitrogen is higher than that of oxygen. The highest refractive index (n) of the tantalum oxynitride film is 2.29 and the extinction coefficient (k) is nearly zero. The refractive index is inversely proportional to the substrate temperature. The mean square surface roughnesses measured by SPM (scanning probe microscopy) for as-deposited at room temperature and 300 degree(s)C were 0.56 nm and 0.17 nm, respectively. By way of a micro-electro-mechanical system (MEMs) technique- the cantilever beam method, the films show a compressive residual-stress state and the coefficient of thermal expansion (CTE) is also measured. The thermal properties were deeply affected by the nitrogen. Thus, TaOxNy films with suitable x,y values are good candidate dielectric materials for optical or magneto- optical purposes.

Paper Details

Date Published: 2 November 2000
PDF: 9 pages
Proc. SPIE 4099, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries, (2 November 2000); doi: 10.1117/12.405826
Show Author Affiliations
Chao An Jong, National Tsing-Hua Univ. (Taiwan)
Tsung Shune Chin, National Tsing-Hua Univ. (Taiwan)


Published in SPIE Proceedings Vol. 4099:
Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries
Ghanim A. Al-Jumaily; Angela Duparre; Bhanwar Singh, Editor(s)

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