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Proceedings Paper

In-situ ellipsometric measurements of thin film aluminum oxidation
Author(s): Eric K. Lindmark; Janusz J. Nowak; Mark T. Kief
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Paper Abstract

In situ spectroscopic ellipsometry is a useful tool for characterizing the kinetics of aluminum oxide growth. Thin aluminum films were deposited on thermally oxidized silicon wafers and dosed with oxygen. Real-time in situ ellipsometry was used to monitor both natural and UV oxidation processes using different oxygen pressures. The raw data was subsequently fit to an optical multi-layer model. The ellipsometric data was sensitive to changes in the oxide layer thickness of much less than a monolayer. With the time scale of our data acquisition two different growth regimes were seen in the fitted data in agreement with the Mott-Cabrera model of oxidation. The growth rate became larger with the assistance of light from the UV lamp.

Paper Details

Date Published: 2 November 2000
PDF: 10 pages
Proc. SPIE 4099, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries, (2 November 2000); doi: 10.1117/12.405822
Show Author Affiliations
Eric K. Lindmark, Seagate Technology (United States)
Janusz J. Nowak, Seagate Technology (United States)
Mark T. Kief, Seagate Technology (United States)


Published in SPIE Proceedings Vol. 4099:
Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries
Ghanim A. Al-Jumaily; Angela Duparre; Bhanwar Singh, Editor(s)

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