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Proceedings Paper

New purged UV spectroscopic ellipsometer to characterize thin films and multilayers at 157 nm
Author(s): Pierre Boher; Patrick Evrard; Jean-Philippe Piel; Jean-Louis P. Stehle
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Paper Abstract

Spectroscopic ellipsometry has long been recognized as the technique of choice to characterize thin films and multi layers. Instrumentation for the next generation of UV lithography at 157nm requires special optical set-up since O2 and H2O are extremely absorbing below 190nm. The new system works into a purged glove box to reduce the oxygen and water contamination in the part per million range. The optical set-up includes a premonochromator in the polarizer arm to avoid photo bleaching. The system works in rotating analyzer configuration to minimize the parasitic polarizations. Ellipsometric and photometric measurement versus wavelength from 145 up to 630 nm and angle of incidence can be performed. The proposed paper will present in details the new system with some first experimental results in the field of micro lithography. Results are compared to those obtained with more standard UV ellipsometers and correlated to other measurements obtained with grazing x-ray reflectance technique.

Paper Details

Date Published: 2 November 2000
PDF: 12 pages
Proc. SPIE 4099, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries, (2 November 2000); doi: 10.1117/12.405821
Show Author Affiliations
Pierre Boher, SOPRA S.A. (France)
Patrick Evrard, SOPRA S.A. (France)
Jean-Philippe Piel, SOPRA S.A. (France)
Jean-Louis P. Stehle, SOPRA S.A. (France)


Published in SPIE Proceedings Vol. 4099:
Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries
Ghanim A. Al-Jumaily; Angela Duparre; Bhanwar Singh, Editor(s)

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