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Proceedings Paper

High-resolution contact lithography by excimer lasers
Author(s): Huijie Huang; Dunwu Lu; Longlong Du; Yongkai Zhao; Cailai Yuan; Baocai Jiang; Runwen Wang
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Paper Abstract

High-resolution contact lithography was conducted by both 248-nm KrF and 193-nm ArF excimer lasers on PMMA resist. The resist thickness is about 0.5 (mu) . Resolution of 0.5- (mu) lines and spaces was obtained on PMMA resist after KrF excimer laser exposure and subsequent wet development. No self-developing photoetching was observed. However, with ArF excimer laser as the exposure light source, resolution of 0.3-(mu) lines and spaces was obtained on the same resist by direct photoetching under high exposure dose combined with subsequent conventional wet developing process.

Paper Details

Date Published: 6 November 2000
PDF: 3 pages
Proc. SPIE 4088, First International Symposium on Laser Precision Microfabrication, (6 November 2000); doi: 10.1117/12.405742
Show Author Affiliations
Huijie Huang, Shanghai Institute of Optics and Fine Mechanics (China)
Dunwu Lu, Shanghai Institute of Optics and Fine Mechanics (China)
Longlong Du, Shanghai Institute of Optics and Fine Mechanics (China)
Yongkai Zhao, Shanghai Institute of Optics and Fine Mechanics (China)
Cailai Yuan, Shanghai Institute of Optics and Fine Mechanics (China)
Baocai Jiang, Shanghai Institute of Optics and Fine Mechanics (China)
Runwen Wang, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 4088:
First International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Koji Sugioka; Thomas W. Sigmon, Editor(s)

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