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Proceedings Paper

Pulsed laser nitridation of InP
Author(s): Naoko Aoki; Toshimitsu Akane; Koji Sugioka; Koichi Toyoda; Jan J. Dubowski; Katsumi Midorikawa
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Paper Abstract

Nitridation of semiconductor surfaces is attractive for passivation as well as fabrication of new materials. Nitridation of the III-V semiconductors has been mainly reported for GaAs. In this paper, we demonstrate the surface nitridation of InP by KrF excimer laser irradiation in an NH3 ambient. The laser fluence was fixed at 80 mJ/cm2 and number of pulses was changed from 500 to 10,000. S-ray photoelectron spectroscopy (XPS) analysis of the nitrided samples reveals that the InP surface contains both InNx and PNy compounds. Nitrogen content increases with the increase of number of pulses. Near- stoichiometric InN and P3N5 are formed by the 2500- pulse irradiation. Aging test reveals that the nitrided samples show anti-oxidation property, which is improved as the number of pulses increases.

Paper Details

Date Published: 6 November 2000
PDF: 4 pages
Proc. SPIE 4088, First International Symposium on Laser Precision Microfabrication, (6 November 2000); doi: 10.1117/12.405737
Show Author Affiliations
Naoko Aoki, Science Univ. of Tokyo (Japan)
Toshimitsu Akane, RIKEN--The Institute of Physical and Chemical Research (Japan)
Koji Sugioka, RIKEN--The Institute of Physical and Chemical Research (Japan)
Koichi Toyoda, Science Univ. of Tokyo (Japan)
Jan J. Dubowski, National Research Council of Canada (Canada)
Katsumi Midorikawa, RIKEN--The Institute of Physical and Chemical Research (Japan)


Published in SPIE Proceedings Vol. 4088:
First International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Koji Sugioka; Thomas W. Sigmon, Editor(s)

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