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Proceedings Paper

Fabrication of Ce:YIG film for electric and magnetic field sensor by pulsed-laser deposition and laser-induced forward transfer
Author(s): Yoshiki Nakata; Yuko Tashiro; Tatsuo Okada; Mitsuo Maeda; Sadao Higuchi; Kiyotaka Ueda
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Paper Abstract

Ce-doped yttrium iron garnet (Ce:YIG) thin films were deposited for the first time by pulsed-laser deposition (PLD) on gadolinium gallium garnet (GGG(111)) substrates. Well crystallized film was obtained at high substrate temperature (approximately 900 degree(s)C) and in low Ar gas pressure (approximately 50 mtorr). A Faraday rotation angle was wavelength dependent, and the largest value was 4.2 x 104 deg/cm at 420 nm. The control of the charge state of Ce ion is necessary for crystallization. The deposited Ce:YIG films were transferred by laser-induced forward transfer (LIFT) process to obtain a thick film.

Paper Details

Date Published: 6 November 2000
PDF: 4 pages
Proc. SPIE 4088, First International Symposium on Laser Precision Microfabrication, (6 November 2000); doi: 10.1117/12.405725
Show Author Affiliations
Yoshiki Nakata, Kyushu Univ. (Japan)
Yuko Tashiro, Kyushu Univ. (Japan)
Tatsuo Okada, Kyushu Univ. (Japan)
Mitsuo Maeda, Kyushu Univ. (Japan)
Sadao Higuchi, Central Research Institute of Electric Power Industry (Japan)
Kiyotaka Ueda, Kyushu Univ. (Japan)


Published in SPIE Proceedings Vol. 4088:
First International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Koji Sugioka; Thomas W. Sigmon, Editor(s)

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