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Proceedings Paper

Influence of laser fluence on the synthesis of carbon nitride thin films by nitrogen-ion-assisted pulsed-laser deposition
Author(s): Jian Ping Zhao; Z. Y. Chen; T. Yano; Toshihiko Ooie; Masafumi Yoneda; J. Sakakibara
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Paper Abstract

Carbon nitride films were deposited by pulsed Nd:YAG laser ablation of graphite with assistance of nitrogen ion beam bombardment. The nitrogen to carbon (N/C) atomic ratio, surface morphology and bonding state of the deposited carbon nitride films were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy and atomic force microscopy (AFM). The influence of laser fluence on the synthesis of carbon nitride films was investigated. The N/C atomic ratio of the carbon nitride films can reach the maximum at the highest laser fluence. XPS and FTIR analyses indicated that the bonding state between the carbon and nitrogen in the deposited films was influenced by the laser fluence during deposition. The carbon-nitrogen bonding of C-N, C=N together with very few CequalsVN were found in the films. Results indicated that the laser fluence also had critical effect on the surface morphologies of the carbon nitride films.

Paper Details

Date Published: 6 November 2000
PDF: 4 pages
Proc. SPIE 4088, First International Symposium on Laser Precision Microfabrication, (6 November 2000); doi: 10.1117/12.405720
Show Author Affiliations
Jian Ping Zhao, Shikoku National Industrial Research Institute (Japan)
Z. Y. Chen, Shikoku National Industrial Research Institute (Japan)
T. Yano, Shikoku National Industrial Research Institute (Japan)
Toshihiko Ooie, Shikoku National Industrial Research Institute (Japan)
Masafumi Yoneda, Shikoku National Industrial Research Institute (Japan)
J. Sakakibara, Shikoku National Industrial Research Institute (Japan)


Published in SPIE Proceedings Vol. 4088:
First International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Koji Sugioka; Thomas W. Sigmon, Editor(s)

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