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Proceedings Paper

F2 laser ablation of GaN
Author(s): Toshimitsu Akane; Koji Sugioka; Shintaro Nomura; Kiyotaka Hammura; Kotaro Obata; Naoko Aoki; Koichi Toyoda; Yoshinobu Aoyagi; Katsumi Midorikawa
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Paper Abstract

F2 laser ablation etching of GaN has been demonstrated. The etching geometry, etching rate and microroughness were investigated, and compared to the case of KrF excimer laser ablation etching. The etching process is consisted of the ablation and hydrochloric acid treatment. Very sharp edge was found along the etched area. The microroughness of etched surface is reduced as the laser intensity increases. The f2 laser ablation of GaN is thought to be initiated by direct photoionization by single-7.9 eV photon absorption.

Paper Details

Date Published: 6 November 2000
PDF: 3 pages
Proc. SPIE 4088, First International Symposium on Laser Precision Microfabrication, (6 November 2000); doi: 10.1117/12.405691
Show Author Affiliations
Toshimitsu Akane, RIKEN--The Institute of Physical and Chemical Research (Japan)
Koji Sugioka, RIKEN--The Institute of Physical and Chemical Research (Japan)
Shintaro Nomura, Univ. of Tsukuba (Japan)
Kiyotaka Hammura, RIKEN--The Institute of Physical and Chemical Research (Japan)
Kotaro Obata, Science Univ. of Tokyo (Japan)
Naoko Aoki, Science Univ. of Tokyo (Japan)
Koichi Toyoda, Science Univ. of Tokyo (Japan)
Yoshinobu Aoyagi, RIKEN--The Institute of Physical and Chemical Research (Japan)
Katsumi Midorikawa, RIKEN--The Institute of Physical and Chemical Research (Japan)


Published in SPIE Proceedings Vol. 4088:
First International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Koji Sugioka; Thomas W. Sigmon, Editor(s)

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