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Proceedings Paper

Applications of pulsed lasers in low-temperature thin film electronics fabrication
Author(s): Thomas W. Sigmon; D. Toet; Paul G. Carey; Patrick M. Smith; Paul Wickboldt
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Paper Abstract

For the past several years, our group has focused on the development of polysilicon thin film transistor (TFT) processes having maximum allowable substrate temperatures between 100 degree(s) to 350 degree(s)C. These processes are based on excimer laser crystallization of low temperature deposited a-Si thin films combined with low temperature deposited dielectrics and self-aligned gate TFT structures. We have also developed a laser-based, source-drain-gate doping/annealing process. Typical n-channel TFT mobilities found are (mu) napproximately 150 cm2/V-s for the 100 degree(s)C process and approximately 400 cm2/V-s for the 350 degree(s)C process. In this paper we describe the basic processes and process physics. We then show results for TFTs fabricated at a variety of maximum substrate temperatures and a-Si deposition techniques.

Paper Details

Date Published: 6 November 2000
PDF: 7 pages
Proc. SPIE 4088, First International Symposium on Laser Precision Microfabrication, (6 November 2000); doi: 10.1117/12.405690
Show Author Affiliations
Thomas W. Sigmon, Lawrence Livermore National Lab. (United States)
D. Toet, Lawrence Livermore National Lab. (United States)
Paul G. Carey, Lawrence Livermore National Lab. (United States)
Patrick M. Smith, Lawrence Livermore National Lab. (United States)
Paul Wickboldt, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 4088:
First International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Koji Sugioka; Thomas W. Sigmon, Editor(s)

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