Share Email Print

Proceedings Paper

Investigation of reverse short channel effect with numerical and compact models
Author(s): Yuwen Wang; Khee Yong Lim; Wensheng Qian; Xing Zhou
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this paper, a physically based reverse short channel effect (RSCE) threshold voltage compact model is investigated and compared with numerical simulation. A new method to predict RSCE using the compact model is given, which is supported by the TCAD data. A wide range of Vth predictions of nchannel MOSFETs with pile-up structures is conducted. Good prediction results are achieved between the RSCE compact model and TCAD data. The results further support the physics-based RSCE mode, which is useful for both circuit simulation and technology development as well as device design.

Paper Details

Date Published: 24 October 2000
PDF: 8 pages
Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); doi: 10.1117/12.405435
Show Author Affiliations
Yuwen Wang, Nanyang Technological Univ. (Singapore)
Khee Yong Lim, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Wensheng Qian, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Xing Zhou, Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 4228:
Design, Modeling, and Simulation in Microelectronics
Bernard Courtois; Serge N. Demidenko; Lee Y. Lau, Editor(s)

© SPIE. Terms of Use
Back to Top