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Proceedings Paper

Steep retrograde indium channel profiling for high-performance nMOSFETs device fabrication
Author(s): Shiang Yang Ong; Eng Fong Chor; Ying Keung Leung; James Lee; Wen Shen Li; Alex K. See; Lap Hung Chan
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Paper Abstract

Integration issues involved in incorporating Indium channel implant in nMOSFET device fabrication are studied using TSUPREM4 and MEDICI simulations. This allows a correlation between the channel doping profile and the electrical results. Techniques are aimed at achieving a Steep Retrograde Channel Profile for effective Short Channel Effects and Reverse Short Channel Effects control. One such technique is the inclusion of a Rapid Thermal Anneal step after NLDD implant. Alternative techniques such as Boron pocket removal and NLDD dose reduction are also studied.

Paper Details

Date Published: 24 October 2000
PDF: 9 pages
Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); doi: 10.1117/12.405423
Show Author Affiliations
Shiang Yang Ong, National Univ. of Singapore and Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Eng Fong Chor, National Univ. of Singapore (Singapore)
Ying Keung Leung, Chartered Semiconductor Manufacturing Ltd. (Singapore)
James Lee, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Wen Shen Li, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Alex K. See, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Lap Hung Chan, Chartered Semiconductor Manufacturing Ltd. (Singapore)


Published in SPIE Proceedings Vol. 4228:
Design, Modeling, and Simulation in Microelectronics
Bernard Courtois; Serge N. Demidenko; Lee Y. Lau, Editor(s)

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