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Proceedings Paper

Surface-potential-based model of reverse short-channel effect in submicrometer MOSFETs with nonuniform lateral channel doping
Author(s): Wensheng Qian; Xing Zhou; Yuwen Wang; Khee Yong Lim
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Paper Abstract

In this paper, a consine-like function instead of a box or a Gaussian-like function is constructed as the pile-up doping in device channel near LDD. The surface potential distribution of nonuniform doping channel is obtained by using Gauss' Law. Threshold voltage roll-up is observed, which is due to the pile-up doping. The simulation results are verified by MEDICI numerical data.

Paper Details

Date Published: 24 October 2000
PDF: 6 pages
Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); doi: 10.1117/12.405420
Show Author Affiliations
Wensheng Qian, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Xing Zhou, Nanyang Technological Univ. (Singapore)
Yuwen Wang, Nanyang Technological Univ. (Singapore)
Khee Yong Lim, Chartered Semiconductor Manufacturing Ltd. (Singapore)


Published in SPIE Proceedings Vol. 4228:
Design, Modeling, and Simulation in Microelectronics
Bernard Courtois; Serge N. Demidenko; Lee Y. Lau, Editor(s)

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