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Proceedings Paper

Empirical model of effective channel length (Leff) for 0.25-um LDD nMOSFET
Author(s): Po-Ching Liu; H. Lin
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Paper Abstract

xThe definition of effective channel length (Leff) is different from the metallurgical junction length (Lmet), or mask length (Lmask) for lightly-doped-drain (LDD) nMOS devices. Based on the measured data for 0.25 micrometers nMOSFET, an empirical expression on the deviation of effective channel resistance under GCA condition, namely VDS << VGS. BY measuring the channel resistance versus different mask lengths under differential variation of gate voltage VGS, and (Delta) Leff can be determined. The result predicts that under high gate voltage, a larger portion of gate overlapping region contributes to the conducing effective channel length.

Paper Details

Date Published: 24 October 2000
PDF: 8 pages
Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); doi: 10.1117/12.405419
Show Author Affiliations
Po-Ching Liu, Nanyang Technological Univ. (Singapore)
H. Lin, Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 4228:
Design, Modeling, and Simulation in Microelectronics
Bernard Courtois; Serge N. Demidenko; Lee Y. Lau, Editor(s)

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