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Proceedings Paper

Diffusion current and thermal noise in short-channel MOSFETs
Author(s): Michael S. Obrecht; Tajinder Manku
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Paper Abstract

RF noise in short channel MOSFETs is discussed from the point of view of diffusion and drift current components. It is demonstrated that the access noise is due to a growing contribution of the diffusion current in a short channel device.

Paper Details

Date Published: 24 October 2000
PDF: 6 pages
Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); doi: 10.1117/12.405417
Show Author Affiliations
Michael S. Obrecht, Siborg Systems Inc. (Canada)
Tajinder Manku, Univ. of Waterloo (Canada)

Published in SPIE Proceedings Vol. 4228:
Design, Modeling, and Simulation in Microelectronics
Bernard Courtois; Serge N. Demidenko; Lee Y. Lau, Editor(s)

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