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Proceedings Paper

Characterization and modeling of avalanche multiplication in HBTs
Author(s): Fujiang Lin; Bo Chen; Tianshu Zhou; Ban Leong Ooi; Pang Shyan Kooi
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Paper Abstract

An accurate modeling of avalanche breakdown of HBTs in compact bipolar transistor models for circuit simulation is presented. Based on various device electrical characteristics that are grouped into three classes, a modified VBIC avalanche multiplication model is proposed. By simply replacing one constant avalanche model parameter with current linear dependence, the new model predicts well broad behaviors of breakdown from weak avalanche up into high injections.

Paper Details

Date Published: 24 October 2000
PDF: 6 pages
Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); doi: 10.1117/12.405408
Show Author Affiliations
Fujiang Lin, Agilent Technologies (Singapore)
Bo Chen, National Univ. of Singapore (Singapore)
Tianshu Zhou, National Univ. of Singapore (Singapore)
Ban Leong Ooi, National Univ. of Singapore (Singapore)
Pang Shyan Kooi, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 4228:
Design, Modeling, and Simulation in Microelectronics
Bernard Courtois; Serge N. Demidenko; Lee Y. Lau, Editor(s)

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