Share Email Print

Proceedings Paper

RF modeling of MOSFETs
Author(s): M. Jamal Deen; Chih-hung Chen; S. Naseh; Yuhua Cheng; M. Matloubian
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

This paper reviews and also discusses some of the important issues in MOSFET Modeling for radio frequency integrated circuits (RFICs). A brief review of some popular or common MOSFET models that can predict the RF properties of MOSFETs is presented. At present, these include BSIM3v3, EKV, MOS Model 9 and adaptations of HSPICE models, and most of them are discussed here. Attention is paid to RF noise parameter extraction and modeling of MOSFETs, since this has been relatively neglected compared to the AC modeling and parameter extraction. Finally, some new and exciting result son the effects of DC electrical stresses on the microwave properties of NMOSFETs, especially the unity current-gain frequencies and maximum oscillation frequencies are presented for different stress times and at different biasing conditions. Modeling of the effects of stress on the RF properties of MOSFETs is still to be investigated.

Paper Details

Date Published: 24 October 2000
PDF: 15 pages
Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); doi: 10.1117/12.405405
Show Author Affiliations
M. Jamal Deen, McMaster Univ. (Canada)
Chih-hung Chen, McMaster Univ. (Canada)
S. Naseh, McMaster Univ. (Canada)
Yuhua Cheng, Conexant Systems, Inc. (United States)
M. Matloubian, Conexant Systems, Inc. (United States)

Published in SPIE Proceedings Vol. 4228:
Design, Modeling, and Simulation in Microelectronics
Bernard Courtois; Serge N. Demidenko; Lee Y. Lau, Editor(s)

© SPIE. Terms of Use
Back to Top