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Proceedings Paper

InP/InGaAs/InP double heterojunction bipolar transistors with improved dc and microwave performance grown by solid source molecular beam-epitaxy
Author(s): Hong Wang; Geok Ing Ng; Hai Qun Zheng; Kaladhar Radhakrishnan; Soon Fatt Yoon; Yongzhong Xiong; Lye Heng Chua; Hongru Yang; Subrata Halder; Chee Leong Tan
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Paper Abstract

This paper describes the fabrication and characterization of the InP/InAs/InP double heterojunction bipolar transistors grown by solid-source molecular beam epitaxy (SSMBE). An improvement in current gain and microwave noise has been observed for the SSMBE-grown InP/InGaAs DHBTs. The HBT with a 50 nm, 2 X 19 cm-3 Be-doped base exhibits dc current gain as high as 350, which is about two times of that measured on the referenced devices grown by gas-source molecular beam epitaxy. The HBT with 5 X 5 micrometers 2 emitter shows a minimum noise figure of 1.04 dB and associated gain of 16 dB measured at 2 GHz with Ic equals 1 mA. In comparison, the HBT grown by GSMBE gives an Fmin of 1.9 dB under same measurement condition. A slight increase in fT and fmax for the SSMBE-grown HBT has also been observed. The drastic increase of current gain for the SSMBE-grown HBT could be explained by reducing base recombination due to the ful elimination of hydrogen contamination during the material growth.

Paper Details

Date Published: 24 October 2000
PDF: 5 pages
Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); doi: 10.1117/12.405397
Show Author Affiliations
Hong Wang, Nanyang Technological Univ. (Singapore)
Geok Ing Ng, Nanyang Technological Univ. (Singapore)
Hai Qun Zheng, Nanyang Technological Univ. (Singapore)
Kaladhar Radhakrishnan, Nanyang Technological Univ. (Singapore)
Soon Fatt Yoon, Nanyang Technological Univ. (Singapore)
Yongzhong Xiong, Nanyang Technological Univ. (Singapore)
Lye Heng Chua, Nanyang Technological Univ. (Singapore)
Hongru Yang, Nanyang Technological Univ. (Singapore)
Subrata Halder, Nanyang Technological Univ. (Singapore)
Chee Leong Tan, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 4227:
Advanced Microelectronic Processing Techniques
H. Barry Harrison; Andrew Thye Shen Wee; Subhash Gupta, Editor(s)

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