Share Email Print
cover

Proceedings Paper

High microwave performance of InGaP/GaAs HBT with beryllium-doped base grown by solid source MBE
Author(s): Pan Yang; Hai Qun Zheng; Lye Heng Chua; Yongzhong Xiong; Hong Wang; Kaladhar Radhakrishnan; Soon Fatt Yoon; Geok Ing Ng
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In this paper, we report for the first time the design, fabrication and characterization of high microwave performance InGaP/GaAs HBTs with beryllium doped base grown by slid-source MBE. Our InGaP/GaAs HBTs have achieved typical fT of 53 GHz and fmax of 40 GHz. These microwave performances are comparable to those of AlGaAs/GaAs with C-doped base and grown by MOCVD fabricated using similar process in our laboratory. Our results suggest that high performance InGaP/GaAs HBTs grown by solid-source MBE can be used for high volume production as in the case with their AlGaAs/GaAs HBT counterparts.

Paper Details

Date Published: 24 October 2000
PDF: 4 pages
Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); doi: 10.1117/12.405396
Show Author Affiliations
Pan Yang, Nanyang Technological Univ. (Singapore)
Hai Qun Zheng, Nanyang Technological Univ. (Singapore)
Lye Heng Chua, Nanyang Technological Univ. (Singapore)
Yongzhong Xiong, Nanyang Technological Univ. (Singapore)
Hong Wang, Nanyang Technological Univ. (Singapore)
Kaladhar Radhakrishnan, Nanyang Technological Univ. (Singapore)
Soon Fatt Yoon, Nanyang Technological Univ. (Singapore)
Geok Ing Ng, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 4227:
Advanced Microelectronic Processing Techniques
H. Barry Harrison; Andrew Thye Shen Wee; Subhash Gupta, Editor(s)

© SPIE. Terms of Use
Back to Top