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Proceedings Paper

Self-organized growth of InP on GaAs substrate by MOCVD
Author(s): Benzhong Wang; Soo-Jin Chua
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Paper Abstract

Self-organized InP quantum dots having a staggered band lineup are formed in a GaAs matrix by MOCVD. Experimental results of photoluminescence show that the growth behaviors are different when the growth is carried out a different temperatures. Thicker and more smooth wetting layer are evident if the InP is grown at 600 degrees C. For the samples of InP grown at 490 degrees C, besides a weak PL peak resulting from the wetting layer, a strong PL peak located at 986 nm is observed. The luminescence can be attributed to radiative recombination of 0D electrons located in the InP dots and holes located in the surrounding regions. State filling of the 0D electrons is also observed for the type-II quantum dots.

Paper Details

Date Published: 24 October 2000
PDF: 5 pages
Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); doi: 10.1117/12.405393
Show Author Affiliations
Benzhong Wang, Institute of Materials Research and Engineering (Singapore)
Soo-Jin Chua, Institute of Materials Research and Engineering (Singapore)

Published in SPIE Proceedings Vol. 4227:
Advanced Microelectronic Processing Techniques
H. Barry Harrison; Andrew Thye Shen Wee; Subhash Gupta, Editor(s)

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