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Proceedings Paper

Plasma removal of post-RIE residues for dual-damascence processing
Author(s): Vladimir N. Bliznetsov; Woo-Min Jo
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Paper Abstract

The objective of this research was to develop a process of photoresist and polymer plasma stripping after reactive ion etching of vias and trenches in dual damascene technology. The development was implemented at Mattson low-temperature ICPsm chamber. Based on the results of designed experiment in gas mixture of O2/CF4/(N2 + 4 percent H2), the process window was established which provided clean post-strip surface with minimum dielectrics loss without using additional wet strippers.

Paper Details

Date Published: 24 October 2000
PDF: 8 pages
Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); doi: 10.1117/12.405391
Show Author Affiliations
Vladimir N. Bliznetsov, Institute of Microelectronics (Singapore)
Woo-Min Jo, Institute of Microelectronics (Singapore)


Published in SPIE Proceedings Vol. 4227:
Advanced Microelectronic Processing Techniques
H. Barry Harrison; Andrew Thye Shen Wee; Subhash Gupta, Editor(s)

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