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Proceedings Paper

Effect of flash copper on Cu diffusion
Author(s): Dao Hua Zhang; Seow Wee Loh; Chao Yong Li; Rong Liu; Andrew Thye Shen Wee; L. Zhang; Y. K. Lee
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Paper Abstract

This paper repots the effect of a flash copper layer, sandwiched between a copper film deposited by metal-organic chemical vapor deposition (MOCVD) and a TaN barrier metal, on copper diffusion through TaN barrier to Si substrate. The structures studied include a Cu film deposited by MOCVD, a thin layer of flash Cu and a TaN barrier layer deposited by ionized metal plasma (IMP), and SiO2 grown on SI substrate. It is found that for the structure of CVD Cu/TaN/SiO2/ Si which has no flash Cu layer, the Cu could diffuse through the 25-nm thick barrier layer at an annealing temperature of 600 degrees C. However, by depositing a flash CU layer between the CVD Cu film and the TaN barrier, the Cu diffusion can be significantly reduced. In addition to Cu, the diffusion of Ta and oxygen, and the interaction between them at different temperatures are also examined. Our observations provide useful information on Cu moralization for deep sub-micron integrated circuits.

Paper Details

Date Published: 24 October 2000
PDF: 7 pages
Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); doi: 10.1117/12.405390
Show Author Affiliations
Dao Hua Zhang, Nanyang Technological Univ. (Singapore)
Seow Wee Loh, Nanyang Technological Univ. (Singapore)
Chao Yong Li, Institute of Microelectronics (Singapore)
Rong Liu, National Univ. of Singapore (Singapore)
Andrew Thye Shen Wee, National Univ. of Singapore (Singapore)
L. Zhang, Nanyang Technological Univ. (Singapore)
Y. K. Lee, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 4227:
Advanced Microelectronic Processing Techniques
H. Barry Harrison; Andrew Thye Shen Wee; Subhash Gupta, Editor(s)

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