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Proceedings Paper

Mechanism of instability on device's characteristics due to intermetal dielectrics with low-k material and the modified process
Author(s): Jiaw-Ren Shih; J. C. Hwang; R. Y. Shiue; H. L. Hwang; John T. Yue
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Paper Abstract

In this paper, the effects of back-end process on device characteristic shift are explored. It had been found that the transistors with different inter-metal-dielectric (IMD) films have different performance. Moreover, more of the IMD layers will result in more of the electrical characteristic shifts. The shift is dominated by the interface state reduction. The mode of plasma-enhanced hydrogen out- diffusion during IMD film deposition is proposed to explain the BEOL-relate device shift. In order to relive this effect of electrical characteristic shift, another alloy step by pure hydrogen anneal is implemented after metal-1 etch and before the Via-1 deposition. It is found the electrical characteristics taken at metal-1 stage are very close to those taken at melal-6 with passivation step. In addition, there is no apparent hot carrier lifetime degradation with or without the pure hydrogen treatment.

Paper Details

Date Published: 24 October 2000
PDF: 6 pages
Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); doi: 10.1117/12.405389
Show Author Affiliations
Jiaw-Ren Shih, Taiwan Semiconductor Manufacturing Co. (Taiwan)
J. C. Hwang, Taiwan Semiconductor Manufacturing Co. (Taiwan)
R. Y. Shiue, Taiwan Semiconductor Manufacturing Co. (Taiwan)
H. L. Hwang, National Tsing Hua Univ. (Taiwan)
John T. Yue, Taiwan Semiconductor Manufacturing Co. (Taiwan)

Published in SPIE Proceedings Vol. 4227:
Advanced Microelectronic Processing Techniques
H. Barry Harrison; Andrew Thye Shen Wee; Subhash Gupta, Editor(s)

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