Share Email Print
cover

Proceedings Paper

Implanted boron distribution in p+n structures using scanning capacitance microscopy
Author(s): Y. L. Teo; Kin Leong Pey; Wai Kin Chim; Yung Fu Chong
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Most of the past work on dopant profiling using scanning capacitance microscopy (SCM) deals mainly with either p+/p or n+/n samples. The presence of a pn junction poses an additional consideration to the use of SCM in the quantitative interpretation of dopant profiles. In this paper, the SCM technique was used to measure the 2D boron dopant profile from cross sections of a high-energy boron-implanted pn junction and a laser annealed ultra- shallow p+-n junction.

Paper Details

Date Published: 24 October 2000
PDF: 9 pages
Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); doi: 10.1117/12.405388
Show Author Affiliations
Y. L. Teo, National Univ. of Singapore (Singapore)
Kin Leong Pey, National Univ. of Singapore (Singapore)
Wai Kin Chim, National Univ. of Singapore (Singapore)
Yung Fu Chong, National Univ. of Singapore (Singapore)


Published in SPIE Proceedings Vol. 4227:
Advanced Microelectronic Processing Techniques
H. Barry Harrison; Andrew Thye Shen Wee; Subhash Gupta, Editor(s)

© SPIE. Terms of Use
Back to Top