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Proceedings Paper

Effects of Zn doping in the substrate on the quantum well intermixing in GaAs/Al0.24Ga0.76As single quantum well structures
Author(s): Feng Zhao; In Wang Choi; Peter Hing; Shu Yuan; Teik Kooi Ong; Boon Siew Ooi; Jian Jiang; Michael C. Y. Chan; Charles C. Surya; E. Herbert Li
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Paper Abstract

N diffusion usually enhances the intermixing in GaAs/AlGaAs quantum well structure. However, Krames et al reported the reduction of layer intermixing in GaAs/AlGaAs quantum well heterostructures by an initial low-temperature 'blocking' Zn diffusion. Zn is commonly used as the dopant of the p-type GaAs substrate. To the best of our knowledge, the effect of Zn diffusion from the Zn-doped GaAs substrate on the intermixing has not been studied. In this work, we report the suppression of GaAs/AlGaAs quantum well intermixing by Zn doping in the GaAs substrate. Three samples with single GaAs/Al0.24Ga0.76As quantum wells were used in the work, all grown together by molecular beam epitaxy, but on three different substrates: Zn-doped p-type GaAs, Si-doped n-type GaAs, and semi-insulating GaAs. The samples were annealed together in a rapid thermal processor at temperatures around 900 degrees C. Photoluminescence measurements were then performed to characterize the samples. The samples with Zn-doped GaAs substrate shows more than 50 percent suppression of quantum well intermixing compared to the other two samples. It is due to Zn diffusion from the substrate into the quantum well, which induces the reduction in the number of group-III vacancies in the quantum well structure.

Paper Details

Date Published: 24 October 2000
PDF: 6 pages
Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); doi: 10.1117/12.405387
Show Author Affiliations
Feng Zhao, Nanyang Technological Univ. (Singapore)
In Wang Choi, Nanyang Technological Univ. (Singapore)
Peter Hing, Nanyang Technological Univ. (Singapore)
Shu Yuan, Nanyang Technological Univ. (Singapore)
Teik Kooi Ong, Nanyang Technological Univ. (Singapore)
Boon Siew Ooi, Nanyang Technological Univ. (Singapore)
Jian Jiang, MBE Technology Pte. Ltd. (Singapore)
Michael C. Y. Chan, Hong Kong Polytechnic Univ. (Hong Kong)
Charles C. Surya, Hong Kong Polytechnic Univ. (Hong Kong)
E. Herbert Li, Univ. of Hong Kong (United States)


Published in SPIE Proceedings Vol. 4227:
Advanced Microelectronic Processing Techniques
H. Barry Harrison; Andrew Thye Shen Wee; Subhash Gupta, Editor(s)

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