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Proceedings Paper

Low threshold current density and high-quantum-efficiency 980-nm cw QW laser
Author(s): Karen Lin Ke; Soo-Jin Chua; Wei Jun Fan
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Paper Abstract

Theoretical and experimental investigation of 980nm quantum well ridge waveguide lasers suitable for pumping Er3+ doped fiber amplifiers are carried out. The valence hole subbands, the TE and TM mode optical gains, and the radiative current density of the In0.2Ga0.8As/GaAs/GaAs strained quantum well lasing at 980 nm have been investigated using a 6 by 6 Hamiltonian model. A very low threshold current density is predicted. These theoretical results would be useful for the design and further performance improvements of the ternary InGaAs and quaternary InAlGaAs strained QW laser diodes. Mesa, stripe geometry and ridge waveguide three quantum wells lasers have fabricated from a graded index separate confinement heterostructure grown by molecule beam epitaxy. For a 4 micrometers wide and 1000micrometers long ridge waveguide laser, a cw threshold current of 12.5mA, the threshold current density of 313A/cm2, an external quantum efficiency of 0.31mW/mA and power slope efficiency of 0.37mW/mA per facet were obtained.

Paper Details

Date Published: 24 October 2000
PDF: 6 pages
Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); doi: 10.1117/12.405386
Show Author Affiliations
Karen Lin Ke, Institute of Materials Research and Engineering (Singapore)
Soo-Jin Chua, Institute of Materials Research and Engineering (Singapore)
Wei Jun Fan, Institute of Materials Research and Engineering (Singapore)

Published in SPIE Proceedings Vol. 4227:
Advanced Microelectronic Processing Techniques
H. Barry Harrison; Andrew Thye Shen Wee; Subhash Gupta, Editor(s)

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