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Characterization of Si-doped GaInAsP/GaAs grown by solid source molecular beam epitaxy
Author(s): Dao Hua Zhang; X. Z. Wang; Hai Qun Zheng; Soon Fatt Yoon; Chan Hin Kam
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Paper Abstract

We report growth and characterization of the Si-doped GaInAsP, lattice-matched to GaAs substrate, grown by solid source molecular beam epitaxy using a valve phosphorous cracker cell. It is found that the electron concentration increases with the temperature of Si effusion cell until 1150 degree C and decreases as the Si-cell temperature is increased further, due to the amphoteric behavior of Si. The Hall mobility follows the same trend except it reaches the maximum at a lower temperature. The Raman results reveal that the GaP-like LO mode of the materials decreases and the InP-like LO mode increases with the Si-cell temperature. It indicates that the excess Si may occupy the P site rather than As sites for p-type conduction. In addition, it is also found that Si doping has no significant influence on the lattice mismatch and has surface roughness.

Paper Details

Date Published: 24 October 2000
PDF: 6 pages
Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); doi: 10.1117/12.405385
Show Author Affiliations
Dao Hua Zhang, Nanyang Technological Univ. (Singapore)
X. Z. Wang, Nanyang Technological Univ. (Singapore)
Hai Qun Zheng, Nanyang Technological Univ. (Singapore)
Soon Fatt Yoon, Nanyang Technological Univ. (Singapore)
Chan Hin Kam, Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 4227:
Advanced Microelectronic Processing Techniques
H. Barry Harrison; Andrew Thye Shen Wee; Subhash Gupta, Editor(s)

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