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Proceedings Paper

Application of excimer laser annealing in the formation of ultrashallow p+/n junctions
Author(s): Yung Fu Chong; Kin Leong Pey; Andrew Thye Shen Wee; Alex K. See; C. H. Tung; R. Gopalakrishnan; Yongfeng Lu
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Paper Abstract

In this study, we have simulated the melt front and temperature distribution profiles for pre-amorphized Si during laser irradiation. The simulation data show that theoretically, it is possible to melt the whole amorphous layer without melting the underlying crystalline substrate. On the other hand, ultra-shallow p+/n junctions were formed by ultra-low energy boron ion implantation into pre- amorphized silicon substrates. Dopant activation was achieved via spike rapid thermal annealing (RTA) and pulsed excimer laser annealing. Secondary ion mass spectrometry analyses show that a step-like dopant profile can be obtained with a single-pulse laser irradiation. Such a profile is in sharp contrast with the boron concentration profile that is obtained after spike RTA. The cross- sectional transmission electron microscopy images show that the entire pre-amorphized layer has been recrystallized to single-crystalline Si after laser annealing. The results clearly indicate the advantages of employing laser anneal as compared to RTA in the fabrication of highly activated and abrupt ultra-shallow junctions.

Paper Details

Date Published: 24 October 2000
PDF: 9 pages
Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); doi: 10.1117/12.405380
Show Author Affiliations
Yung Fu Chong, National Univ. of Singapore (Singapore)
Kin Leong Pey, National Univ. of Singapore (Singapore)
Andrew Thye Shen Wee, National Univ. of Singapore (Singapore)
Alex K. See, Chartered Semiconductor Manufacturing Ltd. (Singapore)
C. H. Tung, Institute of Microelectronics (Singapore)
R. Gopalakrishnan, Institute of Microelectronics (Singapore)
Yongfeng Lu, National Univ. of Singapore (United States)

Published in SPIE Proceedings Vol. 4227:
Advanced Microelectronic Processing Techniques
H. Barry Harrison; Andrew Thye Shen Wee; Subhash Gupta, Editor(s)

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