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Proceedings Paper

Effect of deposition conditions on the properties of HDP-CVD-fluorinated silicon oxide (SiOF)
Author(s): Young Way Teh; Terence Kin Shun Wong; John L. Sudijono; Alex K. See
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Paper Abstract

Fluorinated silicon oxide (SiOF) has been deposited by the high density plasma chemical vapor deposition technique using a SiH4/SiF4/O2/Ar plasma. The effect of the SiF4:O2 flow rate ratio together with the substrate rf bias and the source rf bias were investigated systematically. By varying the SiF4 flow rate ratio together with the substrate rf bias and the source rf bias were investigated systematically. By varying the SiF4 flow rate, the concentration of fluorine in the SiOF can range from approximately 5 at percent to approximately 12 at percent. At low SiF4:O2 flow ratios, the fluorine incorporates primarily as -Si-F in the oxide to changes in the SiOF microstructure, which result in modifications to the properties of this low-k material. An increased substrate rf bias did not affect the density of the oxide. However, the among of incorporated fluorine and the net deposition rate are both reduced. The source rf has no effect on the density of the oxide and the amount of incorporated fluorine. The main effect is a slight increase in the deposition rate.

Paper Details

Date Published: 24 October 2000
PDF: 9 pages
Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); doi: 10.1117/12.405376
Show Author Affiliations
Young Way Teh, Nanyang Technological Univ. (Singapore)
Terence Kin Shun Wong, Nanyang Technological Univ. (Singapore)
John L. Sudijono, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Alex K. See, Chartered Semiconductor Manufacturing, Ltd. (Singapore)


Published in SPIE Proceedings Vol. 4227:
Advanced Microelectronic Processing Techniques

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