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Proceedings Paper

Spreading resistance profiling of ultrashallow junction NPN BJT with carrier redistribution effect
Author(s): Louison Cheng Peng Tan; Leng Seow Tan; Mook Seng Leong
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Paper Abstract

The spreading resistance profiling technique, when applied to ultra shallow junctions, requires the solution of the Poisson's equation in order to correctly account for the carrier redistribution effect. Whereas it is a straightforward procedure to calculate the spreading resistance profile if the dopant profile is given, it is mathematically complex and tedious to recover the dopant profile for an ultra shallow junction profile. The difficulty lies in recovering the correct type of donor or acceptor species and the metallurgical junctions in the right location. It is known that the carrier redistribution effect displaces the on-bevel junctions away from the metallurgical junctions. To put right this difficulty, the FORWARD and SRTOD algorithms are briefly explained in this paper and the results of FORWARD and SRTOD for an NPN BJT are shown. The improved SRTOD algorithm can correct the dopant profile of the double ultra shallow metallurgical junctions from the spreading resistance profile, taking into account the carrier redistribution effect.

Paper Details

Date Published: 24 October 2000
PDF: 11 pages
Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); doi: 10.1117/12.405373
Show Author Affiliations
Louison Cheng Peng Tan, National Univ. of Singapore (Singapore)
Leng Seow Tan, National Univ. of Singapore (Singapore)
Mook Seng Leong, National Univ. of Singapore (Singapore)


Published in SPIE Proceedings Vol. 4227:
Advanced Microelectronic Processing Techniques
H. Barry Harrison; Andrew Thye Shen Wee; Subhash Gupta, Editor(s)

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