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Proceedings Paper

Analysis of N-channel transistor punch-through related to STI process
Author(s): Yunqiang Zhang; James Lee; Chock Hing Gan; David Vigar; Ravi Sundaresan
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Paper Abstract

In this paper we study the causes of an unusually high N- channel transistor punch through leakage using a shallow trench isolation process. This resistive short between source and drain exhibits high structural dependence and has a strong dependence on the channel length and the total field edge of the device. Unlike the normal off-channel leakage. The leakage current of this resistive short shows weak dependence on temperature. Such a correlation between leakage and structure is examined for the first time in this paper. Experimentation with various trench liner oxidation schemes and gap-fill densification was the key to resolve the leakage.

Paper Details

Date Published: 24 October 2000
PDF: 7 pages
Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); doi: 10.1117/12.405372
Show Author Affiliations
Yunqiang Zhang, Chartered Semiconductor Manufacturing Ltd. (Singapore)
James Lee, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Chock Hing Gan, Chartered Semiconductor Manufacturing Ltd. (Singapore)
David Vigar, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Ravi Sundaresan, Chartered Semiconductor Manufacturing Ltd. (Singapore)

Published in SPIE Proceedings Vol. 4227:
Advanced Microelectronic Processing Techniques
H. Barry Harrison; Andrew Thye Shen Wee; Subhash Gupta, Editor(s)

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