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Proceedings Paper

1.54-um erbium luminescence in silicon-germanium
Author(s): Md. Quamrul Huda; Md. S. Islam
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Paper Abstract

Origin of erbium luminescence in silicon-germanium at 1.54 micrometers at 1.54 micrometers has been analyzed. Erbium atoms have been considered as recombination centers with specific values of capture and emission coefficients. Electron-hole recombination through these levels has been considered to be the origin of erbium excitation. At steady state of excitation, a certain fraction of erbium sites were found to remain occupied by electrons. Trapped electrons, which eventually recombine with holes in the valence band, provide the energy for 4I15/2 yields 4I13/2 excitation well layers. Good agreement with experimental results on quenching of erbium luminescence has been achieved. Our model also explains the effect of higher erbium emission in silicon-germanium heterostructures when compared with bulk silicon under similar conditions.

Paper Details

Date Published: 24 October 2000
PDF: 5 pages
Proc. SPIE 4227, Advanced Microelectronic Processing Techniques, (24 October 2000); doi: 10.1117/12.405368
Show Author Affiliations
Md. Quamrul Huda, Bangladesh Univ. of Engineering and Technology (Bangladesh)
Md. S. Islam, Bangladesh Univ. of Engineering and Technology (Bangladesh)


Published in SPIE Proceedings Vol. 4227:
Advanced Microelectronic Processing Techniques
H. Barry Harrison; Andrew Thye Shen Wee; Subhash Gupta, Editor(s)

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