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Proceedings Paper

Degradation of carrier lifetime in irradiated lasers
Author(s): Eric Pailharey; Jacques Baggio; Karl A. Gill; Francois Vasey
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Paper Abstract

The effect of radiation damage on carrier lifetime in 1310 nm InGaAsP/InP multi-quantum-well lasers irradiated with 0.8 MeV neutrons, was investigated for fluences up to 6.9 X 1014 n/cm2. The damage to the carrier lifetime was studied by measuring the transient response of irradiated lasers to incident optical pulses of 1064 nm and 532 nm wavelength, and by relative intensity noise measurements. The carrier lifetime was determined to be degraded to a similar extent in both the InGaAsP laser cavity and the surrounding InP material following radiation damage.

Paper Details

Date Published: 26 October 2000
PDF: 9 pages
Proc. SPIE 4134, Photonics for Space Environments VII, (26 October 2000); doi: 10.1117/12.405347
Show Author Affiliations
Eric Pailharey, CEA-Bruyeres-le-Chatel (France)
Jacques Baggio, CEA-Bruyeres-le-Chatel (France)
Karl A. Gill, CERN (Switzerland)
Francois Vasey, CERN (Switzerland)

Published in SPIE Proceedings Vol. 4134:
Photonics for Space Environments VII
Edward W. Taylor, Editor(s)

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