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Proceedings Paper

Radiation hardness and lifetime of VCSELs and PIN photodiodes for use in the ATLAS SCT
Author(s): Gilles Mahout; David G. Charlton; John D. Dowell; Ingrid-Maria Gregor; Roger J. Homer; Predrag Jovanovic; Andreas Kootz; R. B. Nickerson; Roy Wastie; A. R. Weidberg
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Paper Abstract

This paper reports the radiation hardness of optical components to be used in the binary readout of one of the next generation of detectors in high energy physics. The optical components will have to sustain a total ionizing dose of 500 kGy and a 1 MeV equivalent neutron fluence of 1015 n cm-2. Emitters of VCSEL type have been chosen and have shown a shift of 1 mA in the laser threshold current after irradiation, but are still suitable for our purpose. The epitaxial Si PIN photodiode receivers have an acceptable 30% drop in responsivity providing a higher reverse bias is applied. Speed and lifetime of both components appear to be unaffected by the radiation damage. Temperature characteristics showing differences from un- irradiated materials will be also presented.

Paper Details

Date Published: 26 October 2000
PDF: 8 pages
Proc. SPIE 4134, Photonics for Space Environments VII, (26 October 2000); doi: 10.1117/12.405345
Show Author Affiliations
Gilles Mahout, Univ. of Birmingham (United Kingdom)
David G. Charlton, Univ. of Birmingham (United Kingdom)
John D. Dowell, Univ. of Birmingham (United Kingdom)
Ingrid-Maria Gregor, Univ. of Wuppertal (Germany)
Roger J. Homer, Univ. of Birmingham (United Kingdom)
Predrag Jovanovic, Univ. of Birmingham (United Kingdom)
Andreas Kootz, Univ. of Wuppertal (Germany)
R. B. Nickerson, Univ. of Oxford (United Kingdom)
Roy Wastie, Univ. of Oxford (United Kingdom)
A. R. Weidberg, Univ. of Oxford (United Kingdom)


Published in SPIE Proceedings Vol. 4134:
Photonics for Space Environments VII
Edward W. Taylor, Editor(s)

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