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Proceedings Paper

Radiation-induced dark current increase in CMOS active pixel sensors
Author(s): Jan Bogaert; Bart Dierickx; Chris A. Van Hoof
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Paper Abstract

In this paper we discuss the dark current increase in CMOS Active pixel Sensors (APS) due to total dose and proton induced damage. We describe measurement results on several diodes that were used to investigate the degradation of the pixel photodiode under ionizing radiation. This study resulted in the design of radiation tolerant pixels that have proven to tolerate at least 200 kGy(Si) total dose from a 60Co source. Standard APS sensors show already large degradation after less than 100 Gy(Si) due to a strong surface leakage current increase. Standard CMOS imagers were also evaluated with respect to proton induced damage. Highly energetic protons can displace atoms from their lattice position, giving rise to an increase in mean level of dark current and non-uniformity.

Paper Details

Date Published: 26 October 2000
PDF: 10 pages
Proc. SPIE 4134, Photonics for Space Environments VII, (26 October 2000); doi: 10.1117/12.405333
Show Author Affiliations
Jan Bogaert, IMEC and Katholieke Univ. Leuven (Belgium)
Bart Dierickx, FillFactory (Belgium)
Chris A. Van Hoof, IMEC (Belgium)


Published in SPIE Proceedings Vol. 4134:
Photonics for Space Environments VII
Edward W. Taylor, Editor(s)

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