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Proceedings Paper

Microfabrication technology for high-speed Si-based systems
Author(s): Hiromu Ishii; Shouji Yagi; Kunio Saito; Akihiko Hirata; Kazuhisa Kudou; Masaki Yano; Tadao Nagatsuma; Katsuyuki Machida; Hakaru Kyuragi
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Paper Abstract

Microfabrication technologies for use as practical methods in > 10-micrometers featured high-speed device fabrication have been developed: the thick polyimide-used damascene process, electroless plating of Ru/Ni on Cu interconnections, the area-restricted chemical mechanical planarization to polish thick polyimide films. Applying their technologies to fabricate RF-components and millimeter-wave components on Si demonstrates excellent characteristics: high-quality factor (Q-factor) in spiral inductor, low transmission loss for sidewall coplanar waveguide (CPW), high-power radiation in CPW-fed sot antenna. The Si-technology-based approach to achieve seamless integration of different kinds of devices, i.e., photonic devices, ULSIs, RF-devices, and millimeter- wave devices are promising ways to fabricate high-speed systems on Si.

Paper Details

Date Published: 20 October 2000
PDF: 10 pages
Proc. SPIE 4230, Micromachining and Microfabrication, (20 October 2000); doi: 10.1117/12.404913
Show Author Affiliations
Hiromu Ishii, NTT Telecommunications Energy Labs. (Japan)
Shouji Yagi, NTT Telecommunications Energy Labs. (Japan)
Kunio Saito, NTT Telecommunications Energy Labs. (Japan)
Akihiko Hirata, NTT Telecommunications Energy Labs. (Japan)
Kazuhisa Kudou, NTT Advanced Technology Corp. (Japan)
Masaki Yano, NTT Advanced Technology Corp. (Japan)
Tadao Nagatsuma, NTT Telecommunications Energy Labs. (Japan)
Katsuyuki Machida, NTT Telecommunications Energy Labs. (Japan)
Hakaru Kyuragi, NTT Telecommunications Energy Labs. (Japan)


Published in SPIE Proceedings Vol. 4230:
Micromachining and Microfabrication

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