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Proceedings Paper

Use of Rbd to distinguish different failure modes
Author(s): Wei-Ting Kary Chien; Jun Chen Huang; Charles H. J. Huang
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Paper Abstract

Gate oxide integrity plays an important role in device reliability especially for modern products where high speed and memory capacities are in demand. There are many test methods to ensure gate oxide reliability. After the tests, we usually analyze data by a Weibull or lognormal plot to identify failure mechanisms and to ensure the failures are within the acceptable range. However, in recent years, more and more S-shaped curves are observed especially from a Weibull plot. The S-shaped curve in the Weibull plot may be derived due to more than one failure mode. It is crucial in practice to estimate the lifetime, the percentage, and the failure behavior of Mode A and B, the early and random failures, respectively. In this paper, a methodology to distinguish different failure modes is introduced using the post-breakdown resistance, Rbd, and the extreme-value distributions. The Rbd used in this analysis is defined as 0.5V/Ibd where Ibd is the gate current measured under Vg equals 0.5V after oxide breakdown. By doing so, the percentage of each group can be estimated and failure analysis on samples from different groups can be expedited as the samples with low Rbd are hard breakdowns and the ones with high Rbd are defect-related. By the curve fitting using Weibull and the extreme-value distributions, simple models are proposed for lifetime estimation.

Paper Details

Date Published: 23 October 2000
PDF: 8 pages
Proc. SPIE 4229, Microelectronic Yield, Reliability, and Advanced Packaging, (23 October 2000); doi: 10.1117/12.404886
Show Author Affiliations
Wei-Ting Kary Chien, Worldwide Semiconductor Manufacturing Corp. (Taiwan)
Jun Chen Huang, Worldwide Semiconductor Manufacturing Corp. (Taiwan)
Charles H. J. Huang, Worldwide Semiconductor Manufacturing Corp. (Taiwan)


Published in SPIE Proceedings Vol. 4229:
Microelectronic Yield, Reliability, and Advanced Packaging
Cher Ming Tan; Yeng-Kaung Peng; Mali Mahalingam; Krishnamachar Prasad, Editor(s)

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