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Proceedings Paper

CVD Cu/IMP Cu/TaN/SiO2/Si structures
Author(s): Seow Wee Loh; Dao Hua Zhang; Chao Yong Li; Rong Liu; Andrew Thye Shen Wee
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Paper Abstract

We report the properties of the copper films deposited by metal-organic chemical vapor deposition (MOCVD) and the interaction between the copper film and its neighbor layer in the Cu/TaN/SiO2/Si structures upon annealing in a furnace in a nitrogen environment. It is found that the sheet resistance of the copper film slightly decreases as the annealing temperature increases up to 500 degrees C and the increases drastically with the further increase of the annealing temperature. From x-ray diffraction, both CuTa10O26 and TaSi2 can be observed in the MOCVD Cu/TaN/SiO2/Si structures at an annealing temperature of 600 degrees C, indicating an interact between the Cu film and the layer underneath. For the structures which have a deposited flash Cu layer between the CVD Cu film and TaN barrier, however, the TaSi2 cannot be observed. SIMS analysis indicates that the addition of the flash Cu layer also impacts Cu diffusion across the barrier metal due likely to the change in the crystallographic plane of the Cu films.

Paper Details

Date Published: 23 October 2000
PDF: 7 pages
Proc. SPIE 4229, Microelectronic Yield, Reliability, and Advanced Packaging, (23 October 2000); doi: 10.1117/12.404876
Show Author Affiliations
Seow Wee Loh, Nanyang Technological Univ. (Singapore)
Dao Hua Zhang, Nanyang Technological Univ. (Singapore)
Chao Yong Li, Institute of Microelectronics (Singapore)
Rong Liu, National Univ. of Singapore (Singapore)
Andrew Thye Shen Wee, National Univ. of Singapore (Singapore)


Published in SPIE Proceedings Vol. 4229:
Microelectronic Yield, Reliability, and Advanced Packaging
Cher Ming Tan; Yeng-Kaung Peng; Mali Mahalingam; Krishnamachar Prasad, Editor(s)

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