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Proceedings Paper

Estimation of the area of voids in deep-submicron aluminium interconnects using resistance-noise measurements
Author(s): Lip Wei Chu; Kin Leong Pey; Wai Kin Chim; S. K. Loh; E. Er
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Paper Abstract

Voids can form in aluminium (Al) interconnects as a result of electro migration, stress migration and process-related problems. Such voids can give rise to reliability issues such as an increase in interconnect resistance that increases the RC delay, and localized stress and heating effects, which further enhance electro migration. In this paper, a novel technique to estimate the effective voids area in deep sub-micron Al lines using combined measurements of resistance fluctuation and low-frequency noise is presented. In the proposed mode, fluctuations in voltage at low frequencies, related to resistance-noise fluctuations in the presence of voids in Al lines, were measured under constant-current biasing condition. The noise measurement is known to be more sensitive to device defects and the presence of voids as compared to the conventional technique of resistance measurement alone. A theoretical model that considers the thermal coefficient of resistance in calculating the change in Al line resistance due to the presence of voids and temperature has been developed to extract the effective void area form the experimental data comprising both 1/f noise and resistance variations.

Paper Details

Date Published: 23 October 2000
PDF: 11 pages
Proc. SPIE 4229, Microelectronic Yield, Reliability, and Advanced Packaging, (23 October 2000); doi: 10.1117/12.404874
Show Author Affiliations
Lip Wei Chu, National Univ. of Singapore (Singapore)
Kin Leong Pey, National Univ. of Singapore (Singapore)
Wai Kin Chim, National Univ. of Singapore (Singapore)
S. K. Loh, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
E. Er, Chartered Semiconductor Manufacturing, Ltd. (Singapore)


Published in SPIE Proceedings Vol. 4229:
Microelectronic Yield, Reliability, and Advanced Packaging
Cher Ming Tan; Yeng-Kaung Peng; Mali Mahalingam; Krishnamachar Prasad, Editor(s)

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