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Proceedings Paper

Fast yield learning using e-beam wafer inspection
Author(s): James F. Garvin Jr.; Richard L. Guldi; Nagarajan Sridhar; Mark Tinker; Robert Cappel; Thomas Cass; Jake Roberts
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Paper Abstract

We report examples of the use of automated e-beam inspection to detect yield or reliability limiting defects which were not seen using conventional optical inspection. In SEM-mode, e-beam inspection affords high resolution and large depth- of-focus to defect detection, making it well suited to inspect sub-0.15 micrometers geometries, even in high aspect ratio structures. This technology can find defects smaller than 0.10micrometers , even on densely packed, high aspect ratio, multi- layer geometries. Moreover, with the high signal-to-noise ratio inherent in SEMSpec technology, defects that are difficult to inspect optically later in the fabrication process due to grainy polysilicon, grainy metal, underlying structural variations, or dielectric thickness non- uniformity causing color changes, etc are easily observed. Another advantage of SEMSpec inspection is the voltage contrast operating mode, which detects electrical failures/defects not visible by optical techniques.

Paper Details

Date Published: 23 October 2000
PDF: 7 pages
Proc. SPIE 4229, Microelectronic Yield, Reliability, and Advanced Packaging, (23 October 2000); doi: 10.1117/12.404864
Show Author Affiliations
James F. Garvin Jr., Texas Instruments Inc. (United States)
Richard L. Guldi, Texas Instruments Inc. (United States)
Nagarajan Sridhar, Texas Instruments Inc. (United States)
Mark Tinker, Texas Instruments Inc. (United States)
Robert Cappel, KLA-Tencor Corp. (United States)
Thomas Cass, KLA-Tencor Corp. (United States)
Jake Roberts, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 4229:
Microelectronic Yield, Reliability, and Advanced Packaging
Cher Ming Tan; Yeng-Kaung Peng; Mali Mahalingam; Krishnamachar Prasad, Editor(s)

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