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Proceedings Paper

Comprehensive study of indium-implantation-induced damages in 0.25-um MOSFETs
Author(s): Hong Liao; Louis Lim; Anthony Lowrie; Chock Hing Gan; Mark Redford
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Paper Abstract

In this paper, an investigation of the DC characteristics of 0.25 micrometers indium-implanted MOSFETs concerning on indium implantation induced damages is presented. The experimental data indicates that the devices with indium-implanted channel tend to show increases in device leakage current, which could be attributed the indium implantation induced damages. The impact of the indium implantation on the degradation of device performance was investigated through detailed studies of device I-V characteristics, and the measurement results are found to correlate well with the variations in the process conditions. Our findings indicate that the elimination of the implantation-induced damages by post implantation annealing is particularly important for deep sub-micron MOSFETs using indium implantation.

Paper Details

Date Published: 23 October 2000
PDF: 6 pages
Proc. SPIE 4229, Microelectronic Yield, Reliability, and Advanced Packaging, (23 October 2000); doi: 10.1117/12.404863
Show Author Affiliations
Hong Liao, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Louis Lim, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Anthony Lowrie, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Chock Hing Gan, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Mark Redford, Chartered Semiconductor Manufacturing, Ltd. (Singapore)


Published in SPIE Proceedings Vol. 4229:
Microelectronic Yield, Reliability, and Advanced Packaging
Cher Ming Tan; Yeng-Kaung Peng; Mali Mahalingam; Krishnamachar Prasad, Editor(s)

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