Share Email Print

Proceedings Paper

Low-voltage e-beam irradiation: a new tool for microlithography technology
Author(s): Vladimir A. Kudryashov
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The recent achievements in microfabrication technologies based on low- energy electron irradiation of resist are discussed. It has been shown that the lateral resolution of the low-voltage lithography technique is determined mostly by the electrons scattering in the resist, and is approximately equal to the beam penetration depth. Special technology of self-supporting structures formation in the upper resist layer based on low-energy e-beam exposure has been suggested as a way to reduce the radiation damage of the substrate material to zero. Such self-supporting structures could represent an easy production method for self-aligned nano-structures. Effective technologies of the photoresist structures profile control, and suppression of airborne contamination effects in positive CARs (based on the resist shower irradiation with low-energy electrons) are discussed. Submicron structure self-formation technique based on positive resist structures irradiation with low-voltage electrons is demonstrated.

Paper Details

Date Published: 20 October 2000
PDF: 10 pages
Proc. SPIE 4226, Microlithographic Techniques in Integrated Circuit Fabrication II, (20 October 2000); doi: 10.1117/12.404859
Show Author Affiliations
Vladimir A. Kudryashov, Institute of Microelectronics Technology (Russia) Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 4226:
Microlithographic Techniques in Integrated Circuit Fabrication II
Chris A. Mack; XiaoCong Yuan, Editor(s)

© SPIE. Terms of Use
Back to Top