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Proceedings Paper

Investigation of process latitude in e-beam lithography for positive CAR UVIII using novel volumetric linewidth measurement
Author(s): Vladimir A. Kudryashov; Philip D. Prewett; Alan G. Michette
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Paper Abstract

An application of a simple and low-cost novel volumetric linewidth measurement technique to e-beam lithography process optimization for the positive CAR UVIII demonstrates clearly its efficiency and accuracy. It helps to optimize exposure, PEB and development procedure to get the highest possible process latitude. For this optimized procedure structure linewidth does not exceed 10% for a 20% exposure variation. PEB temperature and time deviation for 1 degree(s)C and 1 second lead to a 0.5 nm and a 2.5 nm linewidth run-out correspondingly.

Paper Details

Date Published: 20 October 2000
PDF: 9 pages
Proc. SPIE 4226, Microlithographic Techniques in Integrated Circuit Fabrication II, (20 October 2000); doi: 10.1117/12.404847
Show Author Affiliations
Vladimir A. Kudryashov, Institute of Microelectronics Technology (Singapore)
Philip D. Prewett, Univ. of Birmingham (United Kingdom)
Alan G. Michette, King's College London (United Kingdom)


Published in SPIE Proceedings Vol. 4226:
Microlithographic Techniques in Integrated Circuit Fabrication II
Chris A. Mack; XiaoCong Yuan, Editor(s)

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