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Proceedings Paper

Hardmask/BARC materials for 157-nm lithography
Author(s): Won D. Kim; Daniel A. Miller; Hyeong-Soo Kim; Jeff D. Byers; Mike Daniels; Britton Birmingham; James Tompkins
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Paper Abstract

157nm lithography is expected to be the lithography choice for the 100nm-technology node, which is scheduled to be in full-production in 2003. However, due to 157nm photons being strongly absorbed by commonly used polymeric organic materials, a completely new class of material (containing F and Si-O) will be needed for 157nm Single Layer Resist (SLR) system. It is expected that the 157nm SLR system development will take greater than 3 years, which the industry will barely have, until the projected 2003 production schedule. In an attempt to fill the gap and to provide working resist system, using thin (<100nm)films of existing resist materials along with inorganic thin hardmask/BARC films is an attractive approach. In this paper, we report the optical constants (n % k at 157nm as well as 193nm and 248nm) of various thin film hardmask/BARC candidate materials (SixNyHz, SixOyNz, SixCyCVD and TixNyPVD films) measured by VUV-VASE. The films' atomic compositions, determined by RBS/HFS, were varied by controlling feed gas flow rates in order to vary the optical behavior. However, we limited our study within the low process temperature PE-CVD and PVC films due to our intention of using these films along with LowK(2.7approximately equals 2.0) dielectric materials. In addition, we will also report the optical constants of two types of LowK materials (PE-CVD OSG film and Spin- On/Cure low-density organosilicate dielectrics by JSR.) The data is, then, used to optimize the physical properties (n & k) and utilized to determine suitable hardmask/BARC material for 157nm exposure using Prolith II simulation. The results containing property of these hardmask/BARC candidate films and our optimization analysis along with the first successful pattern transfer feasibility demonstration into realistic substrate material (poly-Si) using ultra thin resist (currently existing) at 157nm optical lithography are reported.

Paper Details

Date Published: 20 October 2000
PDF: 14 pages
Proc. SPIE 4226, Microlithographic Techniques in Integrated Circuit Fabrication II, (20 October 2000); doi: 10.1117/12.404844
Show Author Affiliations
Won D. Kim, International SEMATECH (United States)
Daniel A. Miller, International SEMATECH (United States)
Hyeong-Soo Kim, International SEMATECH (South Korea)
Jeff D. Byers, International SEMATECH (United States)
Mike Daniels, International SEMATECH (United States)
Britton Birmingham, International SEMATECH (United States)
James Tompkins, International SEMATECH (United States)


Published in SPIE Proceedings Vol. 4226:
Microlithographic Techniques in Integrated Circuit Fabrication II
Chris A. Mack; XiaoCong Yuan, Editor(s)

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