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Proceedings Paper

Corner rounding and line-end shortening in optical lithography
Author(s): Chris A. Mack
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Paper Abstract

Pattern infidelity of features on the wafer is critical to the functionality of a device. Among other error sources, the feature quality on the reticle is presumed to be a key contributing factor to wafer pattern fidelity. Of course, optimization of final pattern fidelity is dependent on the imaging and process of both the mask and wafer, as well as on their relationship to one another. This paper examines the key parameters used to predict the acceptable amount of corner rounding on the reticle, and to define proper metrics of reticle shape. Pattern shapes such as isolated corners, contact holes, and line ends will be examined. For line end shortening, the influence of both the imaging and the resist process is discussed.

Paper Details

Date Published: 20 October 2000
PDF: 10 pages
Proc. SPIE 4226, Microlithographic Techniques in Integrated Circuit Fabrication II, (20 October 2000); doi: 10.1117/12.404843
Show Author Affiliations
Chris A. Mack, FINLE Technologies, a Division of KLA-Tencor (United States)


Published in SPIE Proceedings Vol. 4226:
Microlithographic Techniques in Integrated Circuit Fabrication II
Chris A. Mack; XiaoCong Yuan, Editor(s)

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